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For power and compound semiconductor applications, sample preparation quality can directly affect analytical outcomes.
Ga-free TEM sample preparation with the Thermo Scientific Helios Hydra PFIB-SEM minimizes ion-induced damage and eliminates gallium contamination, producing clean, structurally intact lamellae ready for advanced analysis.
Why Ga-free matters
Traditional Ga-based preparation can introduce:
Gallium implantation
Amorphous damage layers
Artifacts that obscure true device structures
The Helios Hydra PFIB-SEM removes these limitations by enabling Ga-free lamellae, resulting in S/TEM analysis with:
Reliable compositional results from EDS, EELS and DPC
High confidence in nanoscale measurements
Atomic interfacial integrity in HR-STEM
With high-quality lamellae, downstream imaging and analysis become more straightforward. A stable, easy-to-use (S)TEM platform such as the Thermo Scientific Talos F200E (S)TEM can deliver the required structural and compositional insight without the added complexity of probe correction.
The Helios Hydra PFIB-SEM also supports cross-section analysis and 3D characterization for power and compound semiconductor applications, delivering flexibility across sample preparation workflows.
Download our new application note to learn how this optimized workflow enables advanced compound semiconductor analysis with reliable atomic-resolution insights.