Helios MX1 PFIB-SEM Applications

Applications of the Helios MX1 PFIB-SEM in semiconductor

In advanced semiconductor manufacturing, engineers must quickly measure critical dimensions and characterize defects to maintain control of their processes. The Thermo Scientific Helios MX1 PFIB-SEM is designed for in-fab automation and offers fast time to 3D data across memory, logic, and advanced packaging applications on 300 mm wafers. Discover how the Helios MX1 PFIB-SEM integrates argon and xenon FIB milling, high-resolution SEM imaging, sophisticated software including automated 3D reconstruction, and virtual slice metrology to reduce operator workload and improve throughput.

Fully automated semiconductor metrology

Measuring semiconductor devices that are buried beneath the wafer surface has traditionally been a time-consuming process. The Helios MX1 PFIB-SEM uses a multi-ion species plasma FIB to rapidly remove material to reveal buried structures. Thanks to the high-resolution SEM, detailed images are then captured for precise metrology. To obtain measurement data from a large volume of material, integrated 3D reconstruction and virtual slice metrology can be employed, all fully automated.

LEFT Image: Virtual slice metrology used to measure 3D NAND structures. RIGHT Image: Precise metrology of TSV structures

Semiconductor wafer-level defect analysis

Advanced packaging developments, such as 3D scaling, are driving improved device performance and functionality, leading to new defect analysis and process characterization challenges. Helios MX1 PFIB-SEM delivers high-throughput, wafer-level defect analysis to support novel 3D architectures, with capabilities that go beyond conventional failure analysis tools. The system helps improve yield by quickly identifying process defects such as buried voids, delamination, cracks, grain boundary issues, hybrid bonding quality, and wafer-to-wafer stack misalignment. With high-speed argon FIB milling, high-resolution SEM imaging, and 3D visualization, the Helios MX1 PFIB-SEM provides the data needed to quickly characterize buried defects affecting device performance.

Cross sections revealing defects such as bonding misalignment and voids

For Research Use Only. Not for use in diagnostic procedures.