Advanced semiconductor fault isolation

Revolutionary advancements in 2.5D and 3D packaging, sophisticated interconnect architectures, and next-generation power devices present unprecedented challenges in semiconductor failure analysis. As devices become smaller yet more complex, defects typically manifest as anomalous local power dissipation, creating subtle thermal signatures that are critical to identifying underlying issues.

 

The Thermo Scientific ELITE System is a precision fault isolation platform that delivers rapid, non-destructive defect localization through advanced IR lock-in thermography. It can detect defects with high sensitivity enabled by patented noise suppression mechanisms and has the flexibility to combine high-resolution IR imaging with laser scanning microscopy to provide excellent detection accuracy, enabling faster root cause analysis.


Instrument features of the ELITE System

High-resolution lock-in thermography

The ELITE System utilizes a high-resolution IR microscope to enable precise thermal fault localization. The ELITE System’s optimized optical system, with improved sensitivity, enables you to catch defects that other systems miss. Our enhanced sensitivity means fewer escaped defects and higher first-time-right rates.

Laser scanning microscope

The laser scanning microscope can be added to the ELITE System to provide additional precision for fault localization.

Laser marking

Laser marking makes the next steps for navigation more straightforward and reduces time to set up the next step of your failure analysis workflow.

For Research Use Only. Not for use in diagnostic procedures.