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Direct electron detector for 4D STEM

Advanced STEM experiments often require quantitative diffraction information from every probe position, not just an image. The Thermo Scientific EMPAD G2 Detector for 4D STEM supports strain mapping, crystal orientation analysis, electromagnetic field mapping, and ptychographic phase reconstruction in a unified acquisition workflow.

 

The EMPAD G2 Detector is available on Thermo Scientific transmission electron microscopes for materials science and semiconductor analysis and it natively integrates with Thermo Scientific Velox Software.

 

The EMPAD G2 Detector is available in two versions: EMPAD G2 Single with 128 × 128 pixels and EMPAD G2 Quad with 256 × 256 pixels.


Applications for quantitative 4D STEM data

The EMPAD G2 Detector supports materials science and semiconductor applications where researchers need to measure structural, electromagnetic, or crystallographic information from diffraction data. The examples below show how high-DQE, high-dynamic-range detection can support magnetic imaging, semiconductor metrology, orientation mapping, and strain mapping.

Magnetic imaging with Lorentz electron ptychography

When nanoscale magnetic textures are difficult to resolve, Lorentz electron ptychography can help visualize magnetic structure with high resolution and sensitivity.

 

Using the EMPAD G2 Detector, researchers resolved the internal magnetic structure of FeGe skyrmions, including features at skyrmion cores, boundaries, and dislocations.

 

High DQE, high dynamic range, and high current handling help preserve quantitative diffraction information for magnetic field measurement and ptychographic reconstruction.

Color-coded magnetic vector map with directional arrows and 50 nm scale bar.

Image courtesy of Chen Z., Turgut E., Jiang Y., Nguyen K.X., Stolt M.J., Jin S., et al., Nat. Nanotechnol. 2022, 17, 1165–70.

3D atomic-scale metrology for next-generation semiconductor devices

Advanced semiconductor devices contain buried structures that need metrology before electrical testing and defect analysis. Multislice electron ptychography with the EMPAD G2 Detector enables quantitative 3D imaging of buried gate-all-around transistor structures from a single 4D STEM dataset.

 

Atomic-scale strain, interface roughness, buried defects, and structural variations can be measured together to support process-development feedback for next-generation devices.

Ruthenium via orientation mapping

In thin front-end-of-line vias, grain structure can affect product reliability when heavier metals such as tungsten or ruthenium are used to help reduce electron-migration damage.

 

Orientation mapping with the EMPAD G2 Detector can be used to evaluate ruthenium via grain size and correlate the structure with growth conditions.

Color-coded orientation map of a ruthenium via.

Gate-all-around forksheet imaging

One approach to implementing complementary transistors with gate-all-around technology is the forksheet structure.

 

In this view, the SiGe layers have been partially etched, leaving the silicon channel protruding outward. High-aspect-ratio standing pairs can develop strain or bending, which can be evaluated with high-resolution strain mapping.

Color-coded strain map of a gate-all-around (GAA) forksheet structure.

Key features of the EMPAD G2 Detector

The EMPAD G2 Detector is designed for quantitative 4D STEM workflows that require a high signal-to-noise ratio, broad dynamic range, high current handling, and integration with Thermo Scientific TEM data acquisition and analysis software. The features below explain how detector performance, voltage range, and integration with Velox Software support materials science and semiconductor applications.

Quantitative diffraction through outstanding detector performance

The EMPAD G2 Detector delivers outstanding DQE (up to 0.96 at 60 kV, 0.95 at 80 kV, and 0.94 at 300 kV), current handling (180 pA/pixel at 300 kV) and dynamic range (10⁷:1) to maximize signal-to-noise ratio while accurately recording both the direct beam and weak diffraction features in every frame.

Integrated workflow from acquisition to analysis

Acquire 4D STEM data alongside STEM imaging and EDS data in Velox Software, visualize diffraction patterns in real time with virtual detectors, and process data offline with synchronized metadata.

Optimized for samples from 30 to 300 kV

The EMPAD G2 Detector operates from 30 to 300 kV, so you can optimize voltage for the specimen rather than the detector. Across a wide range of samples, you can select the accelerating voltage that delivers the best scientific result without compromising detector performance.

Designed for productivity with native Velox Software control

Native Velox Software control, live diffraction visualization, virtual detectors, Thermo Scientific AutoScript Software compatibility, and global applications and service support reduce the learning curve and help you move quickly from experiment setup to quantitative scientific insight.

Future-ready by design

As an integrated Thermo Fisher Scientific component, the EMPAD G2 Detector benefits from continued software innovation, workflow improvements, and compatibility with future microscopes. Invest in a detector that evolves with new applications rather than remaining a standalone hardware component.


4D STEM applications for structure and field mapping

4D STEM collects a diffraction pattern at each probe position, allowing you to reconstruct phase, map fields, measure strain, and quantify orientation from diffraction data. The EMPAD G2 Detector supports these applications for materials science and semiconductor research when quantitative diffraction information is needed.

Atomic-resolution ptychography

Ptychography recovers phase information from diffraction data to support sub-angstrom imaging of atomic structure and buried defects beyond the conventional STEM resolution limit. 

Image courtesy of Science 372, 826–831 (2021).

Differential phase contrast for field mapping

Differential phase contrast uses diffraction-shift information to map electric and magnetic fields with nanometer resolution using center-of-mass analysis and ptychographic reconstruction. Use it to study magnetic textures, ferroelectric domains, and other functional material features.

Orientation mapping

Orientation mapping uses diffraction data to identify grain orientation, phase distribution, and crystallographic defects. Use it to connect processing conditions, deformation, and material performance.

Strain mapping

Strain mapping uses diffraction patterns to measure local lattice distortions and strain fields. Use it to characterize semiconductor devices, quantum materials, and advanced functional materials where local structural variation matters.


Integrated 4D STEM workflow with Velox Software

4D STEM workflows are easier to reproduce when acquisition, live visualization, metadata, and offline processing are connected. The EMPAD G2 Detector brings 4D STEM into the native Velox Software environment, allowing you to acquire 4D STEM, STEM imaging, and EDS data, visualize diffraction patterns in real time with virtual detectors, and move from acquisition to quantitative analysis with synchronized metadata and integrated processing.


EMPAD G2 Detector specifications

Use the specifications below to evaluate the EMPAD G2 Detector for quantitative 4D STEM workflows, including sensor format, dynamic range, current handling, speed, voltage range, software compatibility, and system requirements.

Sensor dimensions

Active area

19.2 x 19.2 mm or 38.4 x 38.4 mm
Pixels Single 128 x 128 or Quad 256 × 256
Pixel size 150 x150 μm
Active thickness 500 μm
Performance

DQE(0):

  • 0.96 at 60 kV
  • 0.95 at 80 kV
  • 0.94 at 200 kV
  • 0.94 at 300 kV
Dynamic range 107:1 across all exposure times
Max current/pixel
  • 180 pA at 300 kV
  • 270 pA at 200 kV
  • 900 pA at 60 kV

SNR

  • 75:1 at 300 kV for a single electron
  • 50:1 at 200 kV for a single electron
High-tension range 30 to 300 keV
Maximum speed 10,000 fps at full well capacity
Storage capacity Internal storage: 6 TB (standard)
Additional storage: 24 TB (optional)
Control and imaging software
  • Control software: Velox Software
  • Live view: Continuous acquisition of diffraction patterns to focus and perform live optimization
  • Synchronized acquisition: High-speed 4D STEM acquisition in Velox Software, including virtual detectors with live feedback
  • In situ recording: Series acquisition to observe how specimens and their crystal structure change over time
  • Offline processing: Offline reprocessing of the 4D STEM data stack in Velox Software with export options for advanced processing
  • Multimodal acquisition: Simultaneous 4D STEM and EDS acquisition
  • AutoScript Software: Embed 4D STEM in customized workflows with scripting support
  • Improved metadata: Better data connectivity, leading to faster time to publication
System requirements
  • Windows 11
  • Thermo Scientific Talos TEM, Spectra (S)TEM, Iliad (S)TEM, or Metrios TEM
Retrofit For retrofits on your tool, contact the sales and service organization in your region.

Ask the inventors


Resources

EMPAD G2 Detector datasheet


Frequently asked questions

The EMPAD G2 Detector is used to acquire diffraction information from every probe position in a 4D STEM experiment, supporting applications such as ptychography, strain mapping, orientation mapping, magnetic imaging, and semiconductor metrology.

Velox Software integration allows researchers to acquire 4D STEM data alongside STEM imaging and EDS data, visualize diffraction patterns in real time with virtual detectors, and process 4D STEM datasets within a connected workflow.

The EMPAD G2 Detector supports materials science and semiconductor applications, including atomic-resolution ptychography, differential phase contrast field mapping, crystal orientation mapping, strain mapping, magnetic imaging, and 3D semiconductor metrology.

The EMPAD G2 Single Detector has 128 × 128 pixels and the EMPAD G2 Quad has 256 × 256 pixels.

For Research Use Only. Not for use in diagnostic procedures.