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Advancing materials analysis with xenon plasma FIB technology
Focused ion beam (FIB) workflows are essential for modern materials characterization, but traditional gallium-based systems can introduce unwanted artifacts, especially in aluminum and aluminum alloys, where gallium’s high solubility can lead to contamination and liquid metal embrittlement. Xenon plasma FIB (PFIB) technology, as implemented in the Thermo Scientific Helios 5 PFIB DualBeam, overcomes these limitations, enabling artifact-free sample preparation and high-quality cross-sections. Beyond aluminum applications, xenon PFIB plays a critical role in advancing next-generation technologies, from improving electron backscatter diffraction (EBSD) data quality to enabling high-resolution, multiscale 3D analysis of Li-ion batteries and accelerating defect localization in increasingly complex semiconductor devices.
Metals and alloys
Focused ion beam (FIB) milling of aluminum and aluminum alloys with gallium ions can introduce artifacts due to gallium's high solubility in aluminum, leading to issues like liquid metal embrittlement. The Thermo Scientific Helios 5 PFIB DualBeam, using a xenon ion source, eliminates these artifacts, enabling artifact-free aluminum sample preparation. It produces high-quality aluminum cross-sections without the contamination and embrittlement associated with gallium ions. This results in improved electron backscatter diffraction (EBSD) quality and reduced sidewall damage, making xenon PFIB an ideal choice for aluminum sample preparation.
Batteries and energy storage
The increasing demand for electric vehicles and consumer electronics highlights the importance of Li-ion batteries. Plasma FIB, such as the Helios 5 PFIB DualBeam with xenon, is crucial for advancing this technology. It enables detailed multiscale 3D imaging and high-throughput material milling at the electrode level, providing nanometer resolution. This allows precise cross-sectional analysis and accurate capture of structural changes during battery cycling, correlating these changes with degradation phenomena. Plasma FIB's ability to perform both milling and imaging at the same location enhances efficiency and is essential for comprehensive battery research.
Semiconductors and microelectronics
As the dimensions of semiconductor devices shrink and become more complex, defect localization and failure analysis become more critical—and more challenging. With structural elements such as high-density interconnects, wafer-level stacking, flexible electronics, and integral substrates, failure-inducing defects have more places to hide. The Helios 5 PFIB DualBeam’s advanced imaging and deprocessing capabilities, combined with automated workflows, significantly enhance lab productivity and expand capabilities in identifying and visualizing defects.
For Research Use Only. Not for use in diagnostic procedures.